The LMH664X series is based on National Semiconductor’s proprietary VIP10 dielectrically isolated bipolar process. This device family architecture features the following:
• Complimentary bipolar devices with exceptionally high ft (∼8GHz) even under low supply voltage (2.7V) and low bias current.
• A class A-B “turn-around” stage with improved noise, offset, and reduced power dissipation compared to similar speed devices (patent pending).
• Common Emitter push-push output stage capable of 75mA output current (at 0.5V from the supply rails) while
consuming only 2.7mA of total supply current per channel. This architecture allows output to reach within millivolts of either supply rail.
• Consistent performance from any supply voltage (3V- 10V) with little variation with supply voltage for the most
important specifications (e.g. BW, SR, IOUT, etc.)
• Significant power saving (∼40%) compared to competitive devices on the market with similar performance.
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