2012 Welcomes 3D Transistors!!

 

3D Transistor

A transistor is the fundamental building block of all electronic devices. ?.? A transistor can be defined as a device, which is used to amplify signals and power. Integrated circuits are used in making of chips inside electronic gadgets such as smart phones, laptops and so on. Researchers in Purdue and Harvard Universities have created a new type of transistor that will make the Integrated circuits more compact. This transistor is made from another material other than silicon and as the name suggest, a 3-D structure is given to the device compared to the conventional flat chips. Nano wires are used in these transistors instead of silicon so they will be more compact and more efficient. The nano wires used in this transistor are made from iridium gallium arsenide semiconductor.

Iridium-gallium-arsenide is replaced for silicon in this device. As they are elements from the 3^rdand 5^thgroup of the periodic table, they are collectively known as the III-V group semiconductors. These semiconductors are known to conduct electrons five times better than silicon. The mobility of this material is also known to be higher. All these characteristics have urged chip manufacturers to replace silicon with this semiconductor in the coming years.

The 3D transistor was made by a process termed ”top- down method” in which components of the transistor is etched. This method will gain huge acceptance as it is compatible with most of the industrial processes. In 2012, a new generation of integrated chips is believed to come into market in which transistors will be placed horizontally rather than vertically. This is the reason for the 3D effect posed by these transistors. Thus, this device is the world’s first 3D-gate-allround transistor

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